SOI is a new generation of semi-conductor technology, which was first used for high-performance processors and wave ceptor clocks. The development of high-performance semiconductor detectors of elementary particles utilizing this technology has also been advanced. For usual SOI circuits only the upper thin silicon layer is used, but by also using the lower silicon layer, which is structured as a semiconductor sensor, rational detectors unified with signal read-out circuits can be realized, thereby leading to the development of detectors with higher resolution for elementary particles and X-rays. Figure 4 shows a schematic diagram of this detector.
Perspective view of the SOI Pixel detector. Charged particle which traverse the sensor part of the detector (bottom Si) will create electron-hole pairs along its track. The generated holes will drift vertically with electric field and accumulated at the p+ sensor node. Accumulated charges are amplified and stored at each pixel circuit build on the top Si, then the signals are read out from each pixel.
Image of the radiation detection in the SOI pixel detector.
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