Publications

Topical Published Papers (Whole publication list is shown in bottom of this page)

  • “Analog Electronics for Radiation Detection (Devices,Circuits, and Systems)”, Editor Renato Turchetta, Chapter 5 'Time-to-Dogital Converter', Y. Arai, ISBN-10: 1498703569, ISBN-13: 978-1498703567, CRC Press; (2016/4/26)
  • “Radiation Imaging Detectors Using SOI Technology”, Y. Arai and I. Kurachi, Synthesis Lectures on Emerging Engineering Technologies, Morgan & Claypool Publisher (2017/2/15), ISBN-13: 978-1627056960.
  • International Review of the Detector Technology Project, Dec. 10-11, 2013. 'Part I : SOI'
  • 'SOI detector developments', Y. Onuki, H. Katsurayama,Y. Ono, H. Yamamoto, Y. Arai, Y. Fujita, R. Ichimiya, Y. Ikegami, Y. Ikemoto, T. Kohriki, T. Miyoshi, K. Tauchi, S. Terada, T. Tsuboyama, Y. Unno, T. Uchida, K. Hara, K. Shinsho, A. Takeda, K. Hanagaki, T. G. Tsuru, S.G. Ryu, S. Nakashima, H. Matsumoto, R. Takashima, H. Ikeda, D. Kobayashi, T. Wada, T. Hatsui, T. Kudo, A. Taketani, K. Kobayashi, Y. Kirihara, S. Ono, M. Omodani, T. Kameshima, Y. Nagatomo, H. Kasai, N. Kuriyama, N. Miura, M. Okihara, The 20th Anniversary International Workshop on Vertex Detectors - VERTEX 2011, June 19 - 24, 2011, Rust, Lake Neusiedl, Austria, Proceedings of Science, PoS(Vertex 2011)043.
  • 'Radiation effects in silicon-on-insulatortransistorswithback-gatecontrol method fabricatedwithOKISemiconductor0.20 um FD-SOItechnology', M. Kochiyama, T. Sega, K. Hara, Y. Arai, T. Miyoshi, Y. Ikegami, S. Terada, Y. Unno, K. Fukuda, M. Okihara, Nucl. Instr. and Meth. A(2010), doi:10.1016/j.nima.2010.04.086, Volume 636, Issue 1, Supplement, 21 April 2011, Pages S62-S67.
  • 'Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors', T. Wada et al., Journal of Low Temperature Physics, Doi: 10.1007/s10909-012-0461-6new
  • 'Development of SOI pixel process technology', Nucl. Instr. and Meth. A, Vol. 636, Issue 1, Supplement 1, 21 April 2011, Pages S31-S36 7th International ""Hiroshima"" Symposium on the Development and Application of Semiconductor Tracking Detectors, Aug., 2009.
  • 'Waveform Observation of Digital Single-Event Transients Employing Monitoring Transistor Technique', Daisuke Kobayashi, Kazuyuki Hirose, Yoshimitsu Yanagawa, Hirokazu Ikeda, Hirobumi Saito, V´eronique Ferlet-Cavrois, Dale McMorrow, Marc Gaillardin, Philippe Paillet, Yasuo Arai, and Morifumi Ohno, ","IEEE Trans. Nucl. Sci., Volume 55, Issue 6, Part 1, Dec. 2008 Page(s):2872 _ 2879, Digital Object Identifier 10.1109/TNS.2008.2006836",2008,
  • 日本語解説(2007.6 高エネルギーニュース)
  • Deep sub-micron FD-SOI for front-end application Nuclear Instruments and Methods in Physics Research Section A, Available online 26 May 2007, H. Ikeda, Y. Arai, K. Hara, H. Hayakawa, K. Hirose, Y. Ikegami, H. Ishino, Y. Kasaba, T. Kawasaki, T. Kohriki, et al.
  • Evaluation of OKI SOI technology Nuclear Instruments and Methods in Physics Research Section A, Available online 25 May 2007, Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, H. Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, et al.
  • Monolithic Pixel Detector in a 0.15μm SOI Technology, IEEE Nuclear Science Symposium, Conference record, N34-4, Oct. 29-Nov. 4, 2006, San Diego Y. Arai, M. Hazumi, Y. Ikegami ,T. Kohriki, O. Tajima ,S. Terada, T. Tsuboyama , Y. Unno, H. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, H. Hayashi
  • "First Results of 0.15 um CMOS SOI Pixel Detector", Talk given at SLAC seminar and SNIC06 symposium (Apr. 4/5, 2006, Y.Arai) , SLAC Online Paper (Aug. 2006)

Master Thesis

  • 「サブミクロンスケールの位置分解能を持つ高精細SOIピクセル検出器の開発研究」、関川大介、筑波大学大学院、物理学専攻修論、2017年2月
  • 「MGy放射線耐性を持つ2 層埋込酸化膜構造SOI ピクセル検出器の開発研究」、青柳 航筑波大学大学院、物理学専攻修論、2017年2月
  • " Basic research on SOI pixel detectors with internal gain based on avalanche multiplication", Bipin Subedi, Master’s Program in Physics, Graduate School of Pure and Applied Sciences, Univ/ of Tsukuba, 2017年2月
  • 「ILCに向けたピクセルセンサー:SOFISTの動作試験」、大阪大学理学研究科物理学専攻、山中卓研究室修士2 年、森哲平、2017年2月
  • 「チャージポンピング法によるSOIデバイスの埋め込み酸化膜裏面界面の評価」、金沢工業大学大学院 工学研究科 電気電子工学専攻 博士前期課程  瀧 久幸
  • 「SOI構造を用いたSuper Steep Cut Off Deviceの研究」、金沢工業大学大学院 工学研究科 電気電子工学専攻 博士前期課程  蔵本 陽介
  • "ピクセル型X線検出器XRPIXを用いたX線タルボ干渉計の開発"、久留飛寛之、大阪大学理学研究科宇宙地球科学専攻修士論文 2015年度(2016年2月)
  • 宮崎大学大学院応用物理学専攻 竹中亮太 修士論文、「X線 SOI-CMOS 素子のX線TID効果の測定
  • 浅野麻莉(筑波大学大学院、数理物質科学研究科)M Thesis, 「高エネルギー実験のための2層埋込酸化膜構造を持つSOIピクセル検出器の開発研究」(2016.3)
  • 飛田尚志(筑波大学大学院、数理物質科学研究科)M Thesis, 「二層埋込酸化膜構造を持つSOIピクセル検出器回路の放射線損傷の補償」(2016.3)
  • 山口信二郎(Tohoku Univ.) M Thesis 「国際リニアコライダーのビーム形状測定のためのペアモニターの研究」(2016.3)
  • Senzaki (Tsukuba Univ.) M Thesis 「ニュートリノ崩壊光探索のための超伝導トンネル接合光検出器 及び極低温増幅器の開発研究」(2016.2)
  • H. Matsumura(Kyoto Univ.) M Thesis 「宇宙X線観測用SOI ピクセル検出器における
    電荷収集効率の改善」(2015.1)
  • N. Shinoda(Tohoku Univ.) M Thesis 「高エネルギー物理学実験のためのSOI 技術を用いた
    PIXOR半導体検出器の基礎的研究」(2014.2)
  • T. Ishibashi(Tsukuba Univ.) M Thesis「二重SOI層構造を持つ大面積電荷積分型 SOIピクセル検出器の性能評価」(2013.2)
  • H. Katsurayama(Tsukuba Univ.) M Thesis 「積分型SOI pixel 検出器による 高エネルギー粒子ビーム飛跡再構成実験」(2012.3)
  • K. Shinsho(Tsukuba Univ.) M_Thesis「高エネルギー荷電粒子検出用SOI ピクセル検出器の開発研究」(2012.2)
  • Y. Ono(Tohoku Univ.) M_Thesis 'Research and development of the PIXOR (PIXel OR) semiconductor detector for the high energy experiments based on the SOI technology', !東北大学物理学専攻賞!(2012.2)
  • Nakashima (Kyoto Univ.) M Thesis,2010年度測定器開発審査員特別賞!(2011.3)
  • Uchida (Osaka Univ.) M Thesis(2011.3)
  • Kochiyama (Tsukuba Univ.) M Thesis(2010.3)
  • Sega (Tsukuba Univ.) M Thesis(2010.3)
  • Ryu (Kyoto Univ.) M Thesis(2010.3)
  • Hirose (Osak Univ.)、修士論文「SOI技術を用いた一体型Pixel検出器用読み出しシステムの開発、及び積分型Pixel検出器の性能評価」(2009.3.25)
  • Sato (Tohoku Univ.) M Thesis(2009.3)
  • Y. Saegusa (Tokyo Institute of Technology) 'Development of Semiconductor Detector with SOI Technology'(2008.3)
  • Mochizuki (Tsukuba Univ.) M Thesis(2008.3)

Whole Publication List

  • Takahiro Yoshida, Jiro Ida, Takashi Horii, Masao Okihara and Yasuo Arai、“Super Steep Subthreshold Slope PN-Body Tied SOI FET’s of Ultra Low Drain Voltage=0.1V with Body Bias below 1.0V”, 6a.4 pp1-3, 2016 SOI-3D-Subtreshold Microelectronics Unified Conference (IEEE S3S CONFERENCE), 2016
  • "SOI Monolithic Pixel Detector Technology”, Y. Arai, The 25th International workshop on vertex detectors, September 26-30, 2016, La Biodola, Isola d’Elba, ITALY, PoS(Vertex 2016)029.
  • "A broadband x-ray imaging spectroscopy with high-angular resolution: the FORCE mission”, Koji Mori, Takeshi Go Tsuru, Kazuhiro Nakazawa, Yoshihiro Ueda, Takashi Okajima, Hiroshi Murakami, Hisamitsu Awaki, Hironori Matsumoto, Yasushi Fukazawa, Hiroshi Tsunemi, Tadayuki Takahashi, William W. Zhang, Proc. SPIE 9905, Space Telescopes and Instrumentation 2016: Ultraviolet to Gamma Ray, 99051O (August 1, 2016); doi: 10.1117/12.2231262
  • “Development of electron-tracking Compton imaging system with 30-μm SOI pixel sensor.”, Yoshihara, Y., Shimazoe, K., Mizumachi, Y., Takahashi, H., Kamada, K., Takeda, A., Tsuru, T. and Arai, Y., 2017. Journal of Instrumentation, 12(01), p.C01045
  • “Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology”,Y. Zhou, Y. Lu, R. Hashimoto, R. Nishimura, S. Kishimoto, Y. Arai and Q. Ouyang, JINST 12(2017) C01037; doi.org/10.1088/1748-0221/12/01/C01037
  • “Test results of a counting type SOI device for a new X-ray area detector”,R. Hashimoto, Y. Arai, N. Igarashi, R. Kumai, T. Miyoshi and S. Kishimoto, AIP Conference Proceedings 1741 (2016) 040031; doi: 10.1063/1.4952903
  • “Evaluation of a pulse counting type SOI pixel using synchrotron radiation”, R. Hashimoto, Y. Arai, N. Igarashi, R. Kumai, Y. Lu, T. Miyoshi, R. Nishimura, Q. Ouyang, Y. Zhou and S. Kishimoto, on behalf of SOIPIX collaboration,JINST 12(2017) C03061; doi.org/10.1088/1748-0221/12/03/C03061
  • "Tradeoff Between Low-Power Operation and Radiation Hardness of Fully Depleted SOI pMOSFET by Changing LDD Conditions", Ikuo Kurachi, Kazuo Kobayashi, Marie Mochizuki, Masao Okihara, Hiroki Kasai,Takaki Hatsui, Kazuhiko Hara, Toshinobu Miyoshi, and Yasuo Arai, IEEE Transactions on Electron Devices, Vol. 63, No. 6, pp. 2293-2298, June 2016. doi 10.1109/TED.2016.2552486.
  • Confirmation of SS=35μV/dec over 3 Decades of Drain Current and Hole Accumulation Effect on PN-Body Tied SOI Super Steep SS FET’s, Takashi Horii, Jiro Ida, Takahiro Yoshida, Masao Okihara and Yasuo Arai. IEEE SILICON NANOELECTRONICS WORKSHOP 2016, June 12-13, 2016, Honolulu, USA.
  • A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy, Koichi Nagase, Takehiko Wada, Hirokazu Ikeda, Yasuo Arai, Morifumi Ohno, Misaki Hanaoka, Hidehiro Kanada, Shinki Oyabu, Yasuki Hattori, Sota Ukai, Toyoaki Suzuki, Kentaroh Watanabe, Shunsuke Baba, Chihiro Kochi, Keita Yamamoto. J Low Temp Phys, DOI 10.1007/s10909-016-1551-7
  • Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit, T. Wada, Y. Arai, S. Baba, M. Hanaoka, Y. Hattori, H. Ikeda, H. Kaneda, C. Kochi, A. Miyachi, K. Nagase, H. Nakaya, M. Ohno, S. Oyabu, T. Suzuki, S. Ukai, K.Watanabe, K. Yamamoto. J Low Temp Phys, DOI 10.1007/s10909-016-1522-z.
  • Development of an Event-driven SOI Pixel Detector for X-ray Astronomy, - Improvement of an Intra-chip Readout Circuit for Low Noise Performance -, Ayaki Takeda, T.G.Tsuru, T.Tanaka, H.Matsumura, M.Itou, S.Ohmura, Y.Arai, K.Mori, Y.Nishioka, R.Takenaka, T.Kohmura, K.Tamasawa, S.Nakashima, S.Kawahito, K.Kagawa, H.Kamehara, S.Shrestha. 14th The Vienna Conference on Instrumentation (VCI2016), Feb. 15-19, 2016.
  • Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector, Shun Ono, Manabu Togawa, Ryoji Tsuji, Teppei Mori, Miho Yamada, Yasuo Arai, Toru Tsuboyama, Kazunori Hanagaki, 14th The Vienna Conference on Instrumentation (VCI2016), Feb. 15-19, 2016, Nuclear Instruments and Methods in Physics Research, Section A, March 17, 2016.
  • Development of SOI Pixel Detectors and their Applications, Yasuo Arai. International symposium on radiation instruments and users (ISRD) 2016. Tsukuba Japan, Jan. 18-21, 2016.
  • Development of Pixelated Linear Avalanche Integration Detector using Silicon on Insulator Technology, Akihiro Koyama, Kenji Shimazoe, Hiroyuki Takahashi, Ryutaro Hamasaki, Tadashi Orita, Yoshiyuki Onuki, Wataru Otani, Tohru Takeshita, Ikuo Kurachi, Toshinobu Miyoshi, Isamu Nakamura, Yasuo Arai. Proceedings on International symposium on radiation instruments and users (ISRD) 2016. Tsukuba Japan, Jan. 18-21, 2016.
  • Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V, Jiro Ida, Takayuki Mori, Yousuke Kuramoto, Takashi Horii, Takahiro Yoshida, Kazuma Takeda, Hiroki Kasai, Masao Okihara, Yasuo Arai. 2015 IEEE International Electron Devices Meeting (IEDM), Page 22.7.1 - 22.7.4, DOI: 10.1109/IEDM.2015.7409761.
  • Compensation for radiation damage for SOI pixel detector via tunneling, M. Yamada, Y. Arai, Y. Fujita, R. Hamasaki, Y. Ikegami, I. Kurachi, R. Nishimura, K. Tauchi and T. Tsuboyama,proceedings of HSTD10, a special issue of Nucl. Instrum. Meth. A.
  • Reduction of cross-talks between circuit and sensor layer in the Kyoto's X-ray astronomy SOI pixelsensors with Double-SOI wafer, Shunichi Ohmura, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Ayaki Takeda, Hideaki Matsumura, Makoto Ito, Yasuo Arai, Ikuo Kurachi, Toshinobu Miyoshi, Shinya Nakashima, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Koki Noda, Takayoshi Kohmura, Kouki Tamasawa, Yusuke Ozawa, Tadashi Sato, Takahiro Konno, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Hiroki Kamehama, Sumeet Shrestha, Kazuhiko Hara, Shunsuke Honda. 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, Nuclear Instruments and Methods in Physics Research A (2016), http://dx.doi.org/10.1016/j.nima.2016.04.024.
  • The first back-side illuminated types of Kyoto's X-ray astronomy SOIPIX, Makoto Itou, Takeshi Go Tsuru, Takaaki Tanaka, Ayaki Takeda, Hideaki Matsumura, Shunichi Ohmura, Hiroyuki Uchida, Shinya Nakashima, Yasuo Arai, Ikuo Kurachi, Koji Mori, Ryota Takenaka, Yusuke Nishioka, Takayoshi Kohmura, Koki Tamasawa, Craig Tindall. 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, Nuclear Instruments and Methods in Physics Research A (2016), http://dx.doi.org/10.1016/j.nima.2016.04.012.
  • First results of a Double-SOI pixel chip for X-ray imaging Yunpeng Lu a,n, Qun Ouyang a, Yasuo Arai b, Yi Liu a, Zhigang Wu a, Yang Zhou, 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, Nuclear Instruments and Methods in Physics Research A (2016), http://dx.doi.org/10.1016/j.nima.2016.04.022.
  • Development of an X-ray Imaging system with SOI Pixel Detectors, Ryutaro NISHIMURA, Yasuo ARAI, Toshinobu MIYOSHI, Keiichi HIRANO, Shunji KISHIMOTO, Ryo HASHIMOTO. 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, Nuclear Instruments and Methods in Physics Research A (2016), http://dx.doi.org/10.1016/j.nima.2016.04.036.
  • Characteristicsofnon-irradiatedandirradiateddoubleSOIintegration type pixelsensor, M. Asano, D.Sekigawa, K.Hara, W.Aoyagi, S.Honda, N.Tobita, Y.Arai, T.Miyoshi, I.Kurachi, T.Tsuboyama, M.Yamada. Nuclear Instruments and Methods in Physics Research A (2016), 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, http://dx.doi.org/10.1016/j.nima.2016.03.095.
  • Advanced monolithic pixel sensors using SOI technology, Toshinobu Miyoshi, Yasuo Arai, Mari Asano, Yowichi Fujita, Ryutaro Hamasaki, Kazuhiko Hara, Shunsuke Honda, Yoichi Ikegami, Ikuo Kurachi, Shingo Mitsui, Ryutaro Nishimura, Kazuya Tauchi, Naoshi Tobita, Toru Tsuboyama, Miho Yamada. 13th Pisa Meeting on Advanced Detectors, 24–30 May 2015 La Biodola, Isola d’Elba (Italy), Nuclear Instruments and Methods in Physics Research Section A, http://dx.doi.org/10.1016/j.nima.2015.11.109.
  • Evaluation of 0.2um SOI Based Super Steep Subthreshold Slope Device for Sensor and Ultra Low Power Applications, Yosuke KURAMOTO, Jiro IDA, Masazumi KOYAMA, Keita KATSUTI and Yasuo ARAI. The 6th International Conference on Integrated Circuits, Design, and Verification (ICDV 2015), August 10 - 11, 2015 – Ho Chi Minh city, Vietnam (http://www.uet.vnu.edu.vn/icdv) .
  • Improvement of spectroscopic performance using a charge-sensitive amplifier circuit for an X-ray astronomical SOI pixel detector, A. Takeda, T.G. Tsuru, T. Tanaka, H. Uchida, H. Matsumura, Y. Arai, K. Mori, Y. Nishioka, R. Takenaka, T. Kohmura, S. Nakashima, S. Kawahito, K. Kagawa, K. Yasutomi, H. Kamehama and S. Shrestha, PIXEL 2014 INTERNATIONAL WORKSHOP SEPTEMBER 1–5, 2014, NIAGARA FALLS, CANADA, 2015 JINST 10 C06005, doi:10.1088/1748-0221/10/06/C06005.
  • Improving charge-collection efficiency of SOI pixel sensors for X-ray astronomy, Hideaki Matsumura, Takeshi Go Tsuru, Takaaki Tanaka, Ayaki Takeda, Yasuo Arai, Koji Mori, Yusuke Nishioka, RyotaTakenaka, Takayoshi Kohmura,Shinya Nakashima, Takaki Hatsui, YoshikiKohmura, DaiTakei, Takashi Kameshima, NIMA794(2015)255-259. http://dx.doi.org/10.1016/j.nima.2015.05.008.
  • Development of Superconducting Tunnel Junction detectors as a far-infrared photon-by-photon spectrometer for neutrino decay search, Yuji Takeuchi, Shin-Hong Kim, Kenichi Takemasa, Kenji Kiuchi, Kazuki Nagata, Kota Kasahara, Takuya Okudaira, Tatsuya Ichimura, Masahiro Kanamaru, Kouya Moriuchi, Ren Senzaki, Shunsuke Yagi, Hirokazu Ikeda, Shuji Matsuura, Takehiko Wada, Takuo Yoshida, Shota Komura, Keisuke Orikasa, Ryuta Hirose, Yukihiro Kato, Masashi Hazumi, Yasuo Arai, Shigetomo Shiki, Masahiro Ukibe, Go Fujii, Tetsuya Adachi, Masataka Ohkubo, Erik Ramberg, Jonghee Yoo, Mark Kozlovsky, Paul Rubinov, Dmitri Sergatskov, Hirokazu Ishino, Atsuko Kibayashi, Satoru Mima, Soo-Bong Kim. Proceedings of 2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), Page 551-555, DOI: 10.1109/I2MTC.2015.7151327
  • “Fully Depleted SOI Pixel Photo Detectors with Backgate Surface Potential Pinnning”, H. Kamehama, S. Shrestha, K. Yasutomi, K. Kagawa, A. Takeda, T-G. Tsuru, Y. Arai, S. Kawahito, 2015 International Image Sensor Workshop (IISW 2015), 3.05, pp.66-69, Vaals, The Netherlands, 2015.6.8.
  • Analysis of Effective Gate Length Modulation by X-Ray Irradiation for Fully Depleted SOI p-MOSFETs, Ikuo Kurachi, Kazuo Kobayashi, Masao Okihara, Member, IEEE, Hiroki Kasai, Takaki Hatsui, Kazuhiko Hara, Toshinobu Miyoshi, and Yasuo Arai. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, NO. 8, AUGUST 2015. Digital Object Identifier 10.1109/TED.2015.2443797.
  • A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging, Sumeet Shrestha; Hiroki Kamehama; Shoji Kawahito; Keita Yasutomi; Keiichiro Kagawa; Ayaki Takeda; Takeshi Go Tsuru; Yasuo Arai. Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95930X (26 August 2015); Published: 26 August 2015, doi: 10.1117/12.2188019.
  • Characterization of high resolution CMOS monolithic active pixel detector in SOI technology, M.I. Ahmed, Y. Arai, S. Glab, M. Idzik, P. Kapusta, T. Miyoshi, A. Takeda and M. Turala, 2015 JINST 10 P05010, doi:10.1088/1748-0221/10/05/P05010
  • 3D integration technology for sensor application using less than 5um-pitch gold cone-bump connection, M. Motoyoshi,T. Miyoshi,M. Ikebe and Y. Arai, J. of Instrumentation, Jinst 10 C03004 (2015), http://dx.doi.org/10.1088/1748-0221/10/03/C03004, PIXEL 2014 INTERNATIONAL WORKSHOP, SEPTEMBER 1–5, 2014, NIAGARA FALLS, CANADA
  • X-ray imaging detectors for synchrotron and XFEL sources, Takaki Hatsuia and Heinz Graafsm, IUCrJ(2015)2, doi:10.1107/S205225251500010X.
  • 'Initial Characteristics and Radiation Damage Compensation of Double Silicon-on-Insulator Pixel Device', K. Hara, M. Asano, S. Honda, N. Tobita, Y. Arai, I. Kurachi, S. Mitsui, T. Miyoshi, T. Tsuboyama, , VERTEX2014, 15-19 Sep. 2014, Macha Lake, The Czech Republic. PoS(Vertex2014)033.
  • Prototype pixel detector in the SOI technology,M I Ahmed, S Glab, M Idzik, P J Kapusta and M Turala, 2014 1748-0221 9 C02010 doi:10.1088/1748-0221/9/02/C02010.
  • Monolithic SOI pixel detector with a wide dynamic range and a high frame rate for FEL-applications, I Peric, 2014 1748-0221 9 C05031 doi:10.1088/1748-0221/9/05/C05031.
  • Total Ionization Damage Compensations in Double Silicon-on-Insulator Pixel Sensors, Shunsuke HONDA, Kazuhiko HARA, Kohei TSUCHIDA, Mari ASANO, Naoshi TOBITA, Tatsuya MAEDA, Yasuo ARAI, Toshinobu MIYOSHI, Takeshi TSURU,Morifumi OHNO, Noriyuki MIURA, Hiroki KASAI, Masao OKIHARA, Technology and Instrumentation in Particle Physics 2014,2-6 June, 2014, Amsterdam, the Netherlands, PoS(TIPP2014)039
  • Bandgap voltage reference and temperature sensor in novel SOI technology Glab, S. ; Baszczyk, M. ; Dorosz, P. ; Idzik, M. ; Kucewicz, W. ; Sapor, M. ; Arai, Y. ; Miyoshi, T. ; Kapusta, P. ; Takeda, A. Signals and Electronic Systems (ICSES), 2014 International Conference on DOI: 10.1109/ICSES.2014.6948708, Publication Year: 2014 Page(s): 1 - 4
  • Glab, S.; Baszczyk, M.; Dorosz, P.; Idzik, M.; Kucewicz, W. ; Sapor, M.; Arai, Y. ; Miyoshi, T.; Kapusta, P.; Takeda, A., 'Synthetizable digital library created to facilitate design of SOI detectors in 200 nm SOI technology', 2014 International Conference on Signals and Electronic Systems (ICSES), DOI: 10.1109/ICSES.2014.6948729, 2014, pp. 1- 4. 査読有
  • X-ray generation by inverse Compton scattering at the superconducting RF test facility, NIMA Volume 772, 1 February 2015, Pages 26–33, Hirotaka Shimizua, Mitsuo Akemotoa, Yasuo Araia, Sakae Arakia, Alexander Arysheva, Masafumi Fukudaa, Shigeki Fukudaa, Junji Habaa, Kazufumi Haraa, Hitoshi Hayanoa, Yasuo Higashia, Yosuke Hondaa, Teruya Honmaa, Eiji Kakoa, Yuji Kojimaa, Yoshinari Kondoa, Konstantin Lekomtseva, Toshihiro Matsumotoa, Shinichiro Michizonoa, Toshinobu Miyoshia, Hirotaka Nakaia, Hiromitsu Nakajimaa, Kota Nakanishia, Shuichi Noguchia, Toshiyuki Okugia, Masato Satoa, Mikhail Sheveleva, Toshio Shishidoa, Tateru Takenakaa, Kiyosumi Tsuchiyaa, Junji Urakawaa,doi:10.1016/j.nima.2014.10.080
  • Development and Evaluation of an Event-Driven SOI Pixel Detector for X-Ray Astronomy, Ayaki Takeda, Takeshi Go Tsurua, Takaaki Tanakaa, Hideaki Matsumuraa,Yasuo Araib, Koji Moric, Yusuke Nishiokac, Ryota Takenakac, Takayoshi Kohmurad,Shinya Nakashimae, Shoji Kawahitof , Keiichiro Kagawaf , Keita Yasutomif ,Hiroki Kamehamaf and Sumeet Shresthaf, Technology and Instrumentation in Particle Physics 2014,2-6 June, 2014, Amsterdam, the Netherlands. PoS(TIPP2014)138, http://pos.sissa.it/
  • Y. Takeuchi et al., Development of Superconducting Tunnel Junction Detectors as a far-infrared single photon detector for neutrino decay search, TIPP 2014, PoS(TIPP2014)155, http://pos.sissa.it/cgi-bin/reader/conf.cgi?confid=213.
  • Development and Performance of Kyoto’s X-ray Astronomical SOI pixel (SOIPIX) sensor, Takeshi G. Tsuru, Hideaki Matsumuraa, Ayaki Takedaa, Takaaki Tanakaa, Shinya Nakashimab, Yasuo Araic, Koji Morid, Ryota Takenakad, Yusuke Nishiokad, Takayoshi Kohmurae, Takaki Hatsuif,g, Takashi Kameshimag, Kyosuke Ozakif, Yoshiki Kohmuraf, Tatsuya Wagaif, Dai Takeif, Shoji Kawahitoh, Keiichiro Kagawah, Keita Yasutomih, Hiroki Kamehamah, and Sumeet Shresthah. SPIE Astronomical Telescopes+ Instrumentation 2014.6.
  • Investigation of charge-collection efficiency of Kyoto׳s X-ray astronomical SOI pixel sensors, XRPIX, Hideaki Matsumura, Takeshi Go Tsuru, Takaaki Tanaka, Shinya Nakashima, Syukyo G. Ryu, Ayaki Takeda, Yasuo Arai, Toshinobu Miyoshi, NIMA, Volume 765, 21 November 2014, Pages 183-186, http://dx.doi.org/10.1016/j.nima.2014.05.025
  • Search for Cosmic Background Neutrino Decay, Shin-Hong Kim*, Yuji Takeuchi, Kazuki Nagata, Kota Kasahara, Takuya Okudaira, Hirokazu Ikeda1, Shuji Matsuura1, Takehiko Wada1, Hirokazu Ishino2, Atsuko Itsuki2, Satoshi Mima3, Takuo Yoshida4, Yukihiro Kato5, Masashi Hazumi6, Yasuo Arai6, Erik Ramberg7, Jong-Hee Yoo7 and Soo-Bong Kim8, Proceedings of the 12th Asia Pacific Physics Conference, JPS Conf. Proc. 1, 013127 (2014), 10.7566/JPSCP.1.013127
  • SOI Monolithic Pixel Detector, Toshinobu Miyoshi, M.I. Ahmed, Yasuo Arai, Yowichi Fujita, Yukiko, Ikemoto, Ayaki Takeda, and Kazuya Tauchi, 15th INTERNATIONAL WORKSHOP ON RADIATION IMAGING DETECTORS 23–27 JUNE 2013,PARIS, FRANCE, J. of Instrumentation, JINST_095P_1213, 2014, doi:10.1088/1748-0221/9/05/C05044.
  • Y. Arai, 'Progress on Silicon-on-Insulator Monolithic Pixel Process', VERTEX2013 Conf., Sep. 15-20 2013, Lake Starnberg, Germany, Proceedings of Science, PoS(Vertex 2013)021, http://pos.sissa.it/archive/conferences/198/021/Vertex2013_021.pdf, Invited Talk(2013.9.17).
  • Y. Arai and M. Motoyoshi, 'Application of 3D stacking technology to SOI radiation image sensor', IEEE Electrical Design of Advanced Packaging & Systems (EDAPS), Dec. 12-15, 2013, Nara, Todaiji, Japan.Invited Talk(2013.12.12). IEEE Part Number: CFP13EDP-USB, ISBN: 978-1-4799-2312-0, SS1-2, p.5-8.
  • Development of New Circuit for X-ray Astronomical SOI Pixel Detector - Improving Energy Resolution -, A. Takeda, Y. Arai, T. G. Tsuru, T. Tanaka, S. Nakashima, H. Matsumura, T. Imamura4, T. Ohmoto, A. Iwata, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, NPO2-124.
  • Basic Performance of SOI Pixel Detector for Radiation Monitor, Y. Sekiguchi, H. Hamagaki, T. Gunji1, Y. Arai, T. Imamura, T. Ohmoto, A. Iwata, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, NPO1-184.
  • Investigation of Geiger-Mode APD Using SOI Technology, D. Nio1, Y. Arai2, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, NPO1-86
  • Development of SOI Pixel Sensors for X-Ray Astronomy, T. Tanaka1, S. Nakashima1, H. Matsumura1, T. G. Tsuru1, A. Takeda2, Y. Arai2, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, N1-4
  • Development of a Compact X-Ray Source via Laser-Compton Scattering, K. Sakaue1, M. Washio1, S. Araki2, M. Fukuda2, T. Miyoshi2, N. Terunuma2, J. Urakawa2, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, Poster Presentation NPO2-3.
  • 'Evaluation Test of SOI Monolithic Pixel Detectors with High-Speed Readout Electronics', T. Miyoshi, Y. Arai, Y. Fujita, K. Hara, S. Honda, Y. Ikegami, Y. Ikemoto, K. Tauchi, A. Takeda, T. Tsuboyama, Y. Unno, IEEE Nucl. Sci. Symp., Seoul, Oct.27-Nov. 2, 2013, Poster Presentation NPO1-3.
  • Total Ionization Damage Effects in Double Silicon-on-Insulator Devices, S. Honda1, K. Hara1, Y. Arai2, T. Miyoshi2, M. Ohno3, T. Hatsui4, T. Tsuru5, N. Miura6, H. Kasai6, M. Okihara7, M. Asano1, T. Maeda1, N. Tobita1, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013、N41-2,
  • 'Development of Assembly of SOI for Impurity Transport Study in LHD', S. MUTO, T. MIYOSHI, N. TAMURA, H.NAKANSHI, Y. ITOH, K. TSUKADA, T. TSURU, Y. ONO, S. SUDO, Y. ARAI, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, Poster Presentation NPO1-88.
  • S. Mitsui, Development of Silicon-On-Insulator Monolithic Pixel Detectors -FZ SOI sensor-, HSTD9 (International Hiroshima Symposium on the Development and Application of Semiconductor Tracking Detectors)
  • Monolithic pixel detectors with 0.2 um FD-SOI pixel process technology, Oral, T. MIYOSHI, Y. ARAI, Y. IKEMOTO,Y. UNNO, Y. IKEGAMI, R. ICHIMIYA, Y. FUJITA, K. TAUCHI, T. TSUBOYAMA, A. TAKEDA, T. TSURU, S. NAKASHIMA, G. S. RYU, T. KOHRIKI, 13th Vienna Conference on Instrumentation (VCI2013), Vienna, Austria, Feb. 11-15, 2013, Nucl. Instr. and Meth. A, Vol. 732, December 2013, Pages 530-534, http://dx.doi.org/10.1016/j.nima.2013.06.029.
  • Tests With Soft X-rays of an Improved Monolithic SOI Active Pixel Sensor, Ryu, S. G.; Tsuru, T. G.; Prigozhin, G.; Kissel, S.; Bautz, M.; LaMarr, B.; Nakashima, S.; Foster, R. F.; Takeda, A.; Arai, Y.; Imamura, T.; Ohmoto, T.; Iwata, A. Nuclear Science, IEEE Transactions on Volume:60, Issue: 1, Part: 2,Digital Object Identifier: 10.1109/TNS.2012.2231880, Publication Year: 2013 , Page(s): 465- 469
  • Development of the Pixel OR SOI Detector for High Energy Physics Experiments, Y. Ono, A. Ishikawa, Y. Arai, T. Tsuboyama, Y. Onuki, A. Iwata, T. Imamura, T. Ohmoto, International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2012), Inawashiro, Japan. Nuclear Instruments & Methods in Physics Research A (2013), Volume 731, 11 December 2013, Pages 266–269, http://dx.doi.org/10.1016/j. nima.2013.06.044.
  • Measurement results of DIPIX pixel sensor developed in SOI technology, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 718, 1 August 2013, Pages 274-278, Mohammed Imran Ahmed, Yasuo Arai, Marek Idzik, Piotr Kapusta, Toshinobu Miyoshi, Michal Turala, http://dx.doi.org/10.1016/j.nima.2012.10.099
  • A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2μm SOI technology, L Soung Yee, P Alvarez, E Martin, E Cortina and C Ferrer, 2012 1748-0221 7 C12028 doi:10.1088/1748-0221/7/12/C12028,
  • X-Ray Detection Using SOI Monolithic Sensors at a Compact High-Brightness X-Ray Source Based on Inverse Compton Scattering, Oral, T. Miyoshi, Y. Arai, M. Fukuda, J. Haba, H. Hayano, Y. Honda, K. Sakaue, H. Shimizu, A. Takeda, J. Urakawa, K. Watanabe, 2012 IEEE Nuclear Science Symposium, Anaheim, CA, USA. Nov. 2012.
  • Progress in Development of Monolithic Active Pixel Detector for X-ray Astronomy with SOI CMOS Technology, Physics Procedia, Volume 37, 2012, Pages 1373-1380, Shinya Nakashima, Syukyo Gando Ryu, Takeshi Go Tsuru, Ayaki Takeda, Yasuo Arai, Toshinobu Miyoshi, Ryo Ichimiya, Yukiko Ikemoto, Toshifumi Imamura, Takafumi Ohmoto, Atsushi Iwata.
  • Design and Evaluation of a SOI Pixel Sensor for X-ray Trigger-driven Readout, Ayaki Takeda, Yasuo Arai, Syukyo Gando Ryu, Shinya Nakashima, Takeshi Go Tsuru,Toshifumi Imamura, Takafumi Ohmoto, and Atsushi Iwata, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL PP,Issue 99, 2013. Digital Object Identifier: 10.1109/TNS.2012.2225072.
  • Progress of FD-SOI technology for monolithic pixel detectors, Okihara, M. ; Kasai, H. ; Miura, N. ; Kuriyama, N. ; Nagatomo, Y. ; Hatsui, T. ; Omodani, M. ; Miyoshi, T. ; Arai, Y., 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 , pp. 471- 474. DOI: 10.1109/NSSMIC.2012.6551151.
  • High Resolution X-ray Imaging Sensor with SOI Technology, poster, A. TAKEDA, Y. ARAI, T. MIYOSHI, M. OKIHARA, H. KASAI, N. MIURA, N. KURIYAMA, Y. NAGATOMO, International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2012), Inawashiro, Japan.
  • High-Resolution Monolithic Pixel Detectors in SOI Technology, Oral, T. MIYOSHI, Y. ARAI, I. M. AHMED, P. KAPUSTA, R. ICHIMIYA, Y. IKEMOTO, Y. FUJITA, K. TAUCHI, A. TAKEDA, International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2012), Inawashiro, Japan.
  • “Progress of SOI Pixel Process”, Y. Arai, International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, September 3 – 7, 2012 in Inawashiro, Japan, Invited Talk.
  • IEEE Solid State Device and Materials, Kyoto, Invited Talk.Extended abstract, J-1-1, pp. 1107-1108.
  • Advanced Radiation Image Sensors with SOI Technology, Yasuo Arai, Sep. 25, 2012,
  • X-Ray Detector Activities in Japan, DOE Basic Energy Science Neutron and Photon Detector W.S., @Gaithersburg, Invited Talk, 2012.8.1, Yasuo Arai.
  • Recent Progress of Pixel Detector R&D based on SOI Technology, Physics Procedia, Volume 37, 2012, Pages 1039-1045, Toshinobu Miyoshi, Yasuo Arai, Youichi Fujita, Kazuhiko Hara, Ryo Ichimiya, Yoichi Ikegami, Yukiko Ikemoto, Hiroki Kasai, Hironori Katsurayama, Takashi Kohriki, Masao Okihara, Yoshimasa Ono, Yoshiyuki Onuki, Kohei Shinsho, Ayaki Takeda, Kazuya Tauchi, Toru Tsuboyama, Yoshinobu Unno.
  • Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors, T. Wada, H. Nagata, H. Ikeda, Y. Arai, M. Ohno and K. Nagase,Journal of Low Temperature Physics, Issn: 0022-2291, 2012,DOI:10.1007/s10909-012-0461-6, http://www.springerlink.com/content/j7306844556t5397/,
  • Development of an SOI analog front-end ASIC for X-ray charge coupled devices, T. Kishishita, G. Sato, H. Ikeda, M. Kokubun, T. Takahashi, T. Idehara, H. Tsunemi, Y. Arai, Nucl. Instr. and Meth.A, Vol. 636, Issue 1, Suppl. 21 April 2011, Pages S143-S148.
  • SOI Pixel Technology,Y. Arai, The 8th international Hiroshima Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD-8) , Dec. 5-8, 2011, Taipei, Invited Talk.
  • First Performance Evaluation of an X-Ray SOI Pixel Sensor for Imaging Spectroscopy and Intra-Pixel Trigger, Syukyo Gando Ryu ; Tsuru, T.G. ; Nakashima, S. ; Takeda, A. ; Arai, Y. ; Miyoshi, T. ; Ichimiya, R. ; Ikemoto, Y. ; Matsumoto, H. ; Imamura, T. ; Ohmoto, T. ; Iwata, A., Nuclear Science, IEEE Transactions on Volume:
  • Performance study of monolithic pixel detectors fabricated with FD-SOI technology, Miyoshi, T. ; Arai, Y. ; Ichimiya, R. ; Ikemoto, Y. ; Takeda, A., Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE, DOI: 10.1109/NSSMIC.2011.6154664, Publication Year: 2011 , Page(s): 1702
  • Development of X-ray imaging spectroscopy sensor with SOI CMOS technology, Syukyo Gando Ryu ; Tsuru, T.G. ; Nakashima, S. ; Arai, Y. ; Takeda, A. ; Miyoshi, T. ; Ichimiya, R. ; Ikemoto, Y. ; Takashima, R. ; Imamura, T. ; Ohmoto, T. ; Iwata, A., Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE, DOI: 10.1109/NSSMIC.2010.5873714, Publication Year: 2010 , Page(s): 43- 48
  • Development of FD-SOI monolithic pixel devices for high-energy charged particle detection, Hara, K. ; Shinsho, K. ; Ishibashi, T. ; Arai, Y. ; Miyoshi, T. ; Ikemoto, Y. ; Ichimiya, R. ; Tsuboyama, T. ; Kohriki, T. ; Yasu, Y. ; Onuki, Y. ; Ono, Y. ; Katsurayama, H. ; Takeda, A. ; Hanagaki, K., Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE, DOI: 10.1109/NSSMIC.2011.6154318, Publication Year: 2011 , Page(s): 1045
  • SOI detector developments, Y. Onuki, H. Katsurayama,Y. Ono, H. Yamamoto, Y. Arai, Y. Fujita, R. Ichimiya, Y. Ikegami, Y. Ikemoto, T. Kohriki, T. Miyoshi, K. Tauchi, S. Terada, T. Tsuboyama, Y. Unno, T. Uchida, K. Hara, K. Shinsho, A. Takeda, K. Hanagaki, T. G. Tsuru, S.G. Ryu, S. Nakashima, H. Matsumoto, R. Takashima, H. Ikeda, D. Kobayashi, T. Wada, T. Hatsui, T. Kudo, A. Taketani, K. Kobayashi, Y. Kirihara, S. Ono, M. Omodani, T. Kameshima, Y. Nagatomo, H. Kasai, N. Kuriyama, N. Miura, M. Okihara, The 20th Anniversary International Workshop on Vertex Detectors - VERTEX 2011, June 19 - 24, 2011, Rust, Lake Neusiedl, Austria, Proceedings of Science, PoS(Vertex 2011)043.
  • Development of Cryogenic Readout Electronics for Far-Infrared Astronomical Focal Plane Array, Hirohisa NAGATA, Takehiko WADA, Hirokazu IKEDA, Yasuo ARAI, Morifumi OHNO, Koichi NAGASE, IEICE TRANSACTIONS on Communications, Vol. E94-B No.11, pp.2952-2960,2011,http://search.ieice.org/bin/summary.php?id=e94-b_11_2952&category=B&year=2011&lang=E&abst=,
  • First Performance Evaluation of an X-Ray SOI Pixel Sensor for Imaging Spectroscopy and Intra-Pixel Trigger,Syukyo Gando Ryu, Takeshi Go Tsuru, Shinya Nakashima, Ayaki Takeda,Yasuo Arai, Toshinobu Miyoshi, Ryo Ichimiya, Yukiko Ikemoto, Hironori, Matsumoto, Toshifumi Imamura, Takafumi Ohmoto, and Atsushi Iwata, IEEE Transactions on Nuclear Science, Vol. 58, No. 5, Oct. 2011, pp. 2528-2536, ISSN: 0018-9499, Digital Object Identifier: 10.1109/TNS.2011.2160970
  • Monolithic pixel detectors in a deep submicron SOI process,Grzegorz Deptuch,Nuclear Instruments and Methods in Physics Research A623(2010)183_185,
  • Tests of monolithic pixel detectors in SOI technology with depleted substrate, Piero Giubilato, Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes b, Tae Sung Kim,Serena Mattiazzo, Devis Pantano, Nicola Pozzobon, C.S.Tindall, Sarah Zalusky, Nucl.Instr.and Meth. A(2010), doi:10.1016/j.nima.2010.11.185,
  • SOI Readout ASIC of Pair-monitor for International Linear Collider,Yutaro Sato, Yasuo Arai, Hirokazu Ikeda, Tadashi Nagamine, Yosuke Takubo, Toshiaki Tauchi, Hitoshi Yamamoto, Nuclear Inst. and Methods in Physics Research, A、10.1016/j.nima.2011.02.063, Vol. 637, Isuue 1, May 2011, pp. 53-59.
  • Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20 μm FD-SOI technology,M. Kochiyama, T. Sega, K. Hara, Y. Arai, T. Miyoshi, Y. Ikegami, S. Terada, Y. Unno, K. Fukuda, M. Okihara, Nucl. Instr. and Meth. A(2010), doi:10.1016/j.nima.2010.04.086, Volume 636, Issue 1, Supplement, 21 April 2011, Pages S62-S67.
  • Performance study of SOI monolithic pixel detectors for X-ray application, T. Miyoshi, Y. Arai, M. Hirose, R. Ichimiya, Y. Ikemoto, T. Kohriki, T. Tsuboyama, Y. Unno, 7th International Hiroshima Symposium on Development and Applications of Semiconductor Tracking Devices, International Conference Center Hiroshima, Japan, Aug. 29-Sep.1, 2009, Nucl. Instr. and Meth. A, doi:10.1016/j.nima.2010.04.117, Vol. 636 (2011)pp. S237-S241.
  • Radiation test on FD-SOI Readout ASIC of Pair-monitor for ILC, Yutaro Sato , Yasuo Arai, Hirokazu Ikeda, Tadashi Nagamine, Yosuke Takubo, Toshiaki Tauchi, Hitoshi Yamamoto, Nucl. Instr. and Meth. A(2011), doi:10.1016/j.nima.2010.12.149, Volume 650, Issue 1, 11 September 2011, Pages 106-110.
  • Evaluation of Monolithic Silicon-On-Insulator Pixel Devices Thinned to 100 um, K. Shinsho, K. Hara, Y. Arai, Y. Ikemoto, T. Kohriki, T. Miyoshi, 2010 IEEE Nuclear Science Symposium, Conference record, doi: 10.1109/NSSMIC.2010.5873838, 2010, Page(s): 646-649
  • Development of X-ray Imaging Spectroscopy Sensor with SOI CMOS Technology, Syukyo Gando Ryu, Takesahi Go Tsuru, Shinya Nakashima, Yasuo Arai, Ayaki Takeda, T. Miyoshi, R. Ichimiya, Y. Ikemoto, R. Takashima d, T. Imamura, T. Ohmoto, and A. Iwata, 2010 IEEE Nuclear Science Symposium, Conference record. doi: 10.1109/NSSMIC.2010.5873714, 2010 , Page(s): 43-48.
  • Development of INTPIX and CNTPIX Silicon-On-Insulator Monolithic Pixel Devices, K. Hara, M. Kochiyama, K. Koike, T. Sega, K. Shinsho, Y. Arai, Y. Fujita, R. Ichimiya, Y. Ikegami, Y. Ikemoto, T. Kohriki, T. Miyoshi, K. Tauchi, S.Terada, T. Tsuboyma, Y. Unno, Y. Horii, Y. Onuki, D. Nio, A. Takeda, K.Hanagaki, J. Uchida, T. Tsuru, S.G. Ryu, I. Kurachi, H. Kasai, N. Kuriyama, N.Miura, M. Okihara, M. Motoyoshi, 19th International Workshop on Vertex Detectors - VERTEX 2010, Loch Lomond, Scotland, UK, June 06 _ 11 2010, http://pos.sissa.it/cgi-bin/reader/conf.cgi?confid=113, PoS(VERTEX 2010)033.
  • Large SET Duration Broadening in a Fully-Depleted SOI Technology-Mitigation With Body Contacts, Ferlet-Cavrois, V.; Kobayashi, D.; McMorrow, D.; Schwank, J. R.; Ikeda, H.; Zadeh, A.; Flament, O.; Hirose, K.;, Nuclear Science, IEEE Transactions on Volume: 57 , Issue: 4 , Part: 1, Digital Object Identifier: 10.1109/TNS.2010.2048927, Publication Year: 2010 , Page(s): 1811 - 1819.
  • Readout ASIC With SOI Technology for X-Ray CCDs, Kishishita, T.; Idehara, T.; Ikeda, H.; Tsunemi, H.; Arai, Y.; Sato, G.; Takahashi, T.;, Nuclear Science, IEEE Transactions on Volume: 57 , Issue: 4 , Part: 2, Digital Object Identifier: 10.1109/TNS.2010.2049371, Publication Year: 2010 , Page(s): 2359 - 2364.
  • Integrated Radiation Image Sensors with SOI technology, Yasuo Arai, Toshinobu Miyoshi, Ryo Ichimiya, Kazuhiko Hara, Yoshiyuki Onuki, SOI Conference (SOI), 2010 IEEE International Digital Object Identifier: 10.1109/SOI.2010.5641403, Publication Year: 2010 , Page(s): 1 - 5.
  • Vertical Integration of Radiation Sensors and Readout Electronics,Y.Arai,15th Mediterranian Electromechanical Conference, Melecon 2010, Valletta, Malta, 25-28 April, 2010, pp. 1062-1067.
  • New Techniques in SOI Pixel Detector,Y. Arai, 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference, Orlando Florida, Oct. 25-31, 2009, Conference Record, N22-2, pp. 1161-1164. Digital Object Identifier: 10.1109/NSSMIC.2009.5402397
  • Reduction techniques of the back gate effect in the SOI Pixel Detector,R. Ichimiya, Y.Arai, K. Fukuda, I. Kurachi, N. Kuriyama, M. Ohno, M. Okihara, for the SOI Pixel collaboration,Proceedings of Topical Workshop on Electronics for Particle Physics (TWEPP-09), 21-25 Sep. 2009, CERN-2009-006, pp. 68-71.
  • Development of SOI Pixel Process Technology,Y. Arai, T. Miyoshi, Y. Unno, T. Tsuboyama, S. Terada, Y. Ikegami, R. Ichimiya, T. Kohriki, K. Tauchi, Y. Ikemoto, R. Ichimiya, Y. Fujita, T. Uchida, H. Ikeda, K. Hara, H. Miyake, M. Kochiyama, T. Sega, K. Hanagaki, M. Hirose, J. Uchida, Y. Onuki, Y. Horii, H. Yamamoto, T. Tsuru, H. Matsumoto, S. G. Ryu, R. Takashima, A. Takeda, H. Ikeda, D. Kobayashi, T. Wada, H. Nagatg, T. Hatsui, T. Kudo, A. Taketani, T. Kameshima, T. Hirono, M. Yabashi, Y. Furukawa, M. Battaglia, P. Denes, C. Vu, D. Contarato, P. Giubilato, T. S. Kim, T. Hatsui, T. Kudo, T. Hirono, M. Yabashi, Y. Furukawe, M. Ohno, K. Fukuda, I. Kurachi, H. Komatsubara, J. Ida, M. Okihara, N. Kuriyama, M. Motoyoshi, 7th International Hiroshima Symposium on Development and Applications of Semiconductor Tracking Devices, International Conference Center Hiroshima, Japan, Aug. 29-Sep.1, 2009,Nucl. Instr. and Meth. doi:10.1016/j.nima.2010.04.081. Volume 636, Issue 1, Supplement, 21 April 2011, Pages S31-S36.
  • Silicon-on-insulator technology enables next-generation radiation image sensors, Yasuo Arai and Toshinobu Miyoshi, August 2009, SPIE Newsroom. http://spie.org/x36212.xml?highlight=x2414&ArticleID=x36212,DOI:10.1117/2.1200907.1725.
  • Developments of SOI Monolithic Pixel Detectors, Y. Arai, T. Miyoshi, Y. Unno, T. Tsuboyama, S. Terada, Y. Ikegami, T. Kohriki, K. Tauchi, Y. Ikemoto, R. Ichimiya, H. Ikeda, K. Hara, H. Miyake, M. Kochiyama, T. Sega, K. Hanagaki, M. Hirose, T. Hatsui, T. Kudo, T. Hirono, M. Yabashi, Y. Furukawa, G. Varner, M. Cooney, H. Hoedlmoser, J. Kennedy, H. Sahoo, M. Battaglia, P. Denes, C. Vu, D. Contarato, P. Giubilato, L. Glesener, R. Yarema, R. Lipton, G. Deptuch, M. Trimpl, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, M. Okihara, H. Hayashi, Y. Kawai, A. Ohtomo, , Technology and Instrumentation in Particle Physics 2009 in Tsukuba, Japan, 11-17 March, 2009, Nucl. Instr. and Meth. A 623(2010)186-188, doi:10.1016/j.nima.2010.02.190
  • Device-physics-based analytical model for single event transients in SOI CMOS logics”,D. Kobayashi, K. Hirose, V. Ferlet-Cavrois, D. McMorrow, M. Gaillardin, T. Makino, H. Ikeda, Y. Arai, and M. Ohno,, 2009 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Quebec, Canada, July 20--24, IEEE Trans. Nucl. Sci. 56 (2009) 3043.
  • High-speed charge-to-time converter ASIC for the Super-Kamiokande detector, H. Nishino, K. Awai, Y. Hayato, S. Nakayama, K. Okumura, M. Shiozawa, A. Takeda, K. Ishikawa, A. Minegishi, Y. Arai, Nucl.Instrum.Meth.A610:710-717,2009.
  • Waveform Observation of Digital Single-Event Transients Employing Monitoring Transistor Technique, Daisuke Kobayashi, Kazuyuki Hirose, Yoshimitsu Yanagawa, Hirokazu Ikeda, Hirobumi Saito, V´eronique Ferlet-Cavrois, Dale McMorrow, Marc Gaillardin, Philippe Paillet, Yasuo Arai, and Morifumi Ohno,IEEE Trans. Nucl. Sci., Volume 55, Issue 6, Part 1, Dec. 2008 Page(s):2872 _ 2879, Digital Object Identifier 10.1109/TNS.2008.2006836.
  • Development of Silicon-on-Insulator Sensor for X-Ray Free-Electron Laser Applications,T. Kudo, T. Hatsui, Y. Arai, Y. Ikegami, Y. Unno, T. Tsuboyama, S. Terada, M. Hazumi, T. Kohriki, H. Ikeda, K. Hara, A. Mochizuki, H. Miyake, H. Ishino, Y. Saegusa, S. Ono, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, H. Hayashi, Y. Kawai, M. Okihara, T. Ishikawa, IEEE Nucl. Sci. Symp., Oct. 2008, Poster R12-58,
  • Radiation Resistance of SOI Pixel Sensors Fabricated with OKI 0.15μm FD-SOI Technology, K. Hara, M. Kochiyama, A. Mochizuki, T. Sega, Y. Arai, K. Fukuda, H. Hayashi, M. Hazumi, J. Ida, H. Ikeda, Y. Ikegami, H. Ishino, Y. Kawai, T. Kohriki, H. Komatsubara, H. Miyake, M. Ohno, M. Okihara, S. Terada, T. Tsuboyama, Y. Unno, N04-5, Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE, 19-25 Oct. 2008 Page(s):1369 _ 1374, Digital Object Identifier 10.1109/NSSMIC.2008.4774670, IEEE Transactions on Nuclear Science, Volume 56, Issue 5, Part 2, Oct. 2009 Page(s):2896 - 2904.
  • The 11th Vienna Conference on Instrumentation, Vienna, Austria February 19-24, 2007. T. Tsuboyama (Withdrawn?)
  • R&D of a pixel sensor based on 0.15 μm fully depleted SOI technology, Toru Tsuboyama, Yasuo Arai, Koichi Fukuda, Kazuhiko Hara, Hirokazu Hayashi, Masashi Hazumi, Jiro Ida, Hirokazu Ikeda, Yoichi Ikegami, Hirokazu Ishino, Takeo Kawasaki, Takashi Kohriki, Hirotaka Komatsubara, Elena Martin, Hideki Miyake, Ai Mochizuki, Morifumi Ohno, Yuuji Saegusa, Hiro Tajima, Osamu Tajima, Tomiaki Takahashi, Susumu Terada, Yoshinobu Unno, Yutaka Ushiroda and Gary Varner, Proceedings of the 15th International Workshop on Vertex Detectors: Perugia, Italy, September 25–29, 2006, Nucl. Instr. and Meth A. Volume 582, Issue 3, 1 December 2007, Pages 861-865, http://dx.doi.org/10.1016/j.nima.2007.07.130,
  • “A monolithic pixel sensor in fully depleted SOI technology”, , Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Chinh Vu. , Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 583, Issues 2-3, 21 December 2007, Pages 526-528.
  • Total Dose Effects on 0.15μm FD-SOI CMOS Transistors”, , Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, H. Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T.Tsuboyama and Y. Unno,, 2007 IEEE Nuclear Science Symposium Conference Record, N44-6, pp. 2173-2177.
  • SOI Pixel Developments in a 0.15μm Technology”,, Y. Arai, Y. Ikegami, Y. Unno, T. Tsuboyama, S. Terada, M. Hazumi, T. Kohriki, H. Ikeda, K. Hara, H. Miyake, H. Ishino, G. Varner, E. Martin, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, H. Hayashi, Y. Kawai, , 2007 IEEE Nuclear Science Symposium Conference Record, N20-2, pp. 1040-1046.
  • SOI Monolithic Pixel Detector R&D in a 0.15 mm SOI Technology, Y. Arai, Y. Ikegami, Y. Unno, T. Tsuboyama, S. Terada, M. Hazumi, T. Kohriki, H. Ikeda, K. Hara, H. Ishino, H. Miyake, K. Hanagaki, G. Varner, E. Martin, H. Tajima, Y. Hayashi, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida., 16th International Workshop on Vertex detectors, September 23-28, 2007, Lake Placid, NY, USA, Vertex 2007, Poster Presentation.
  • Electronics and Sensor Study with the OKI SOI process, Y. Arai, , Topical Workshop on Electronics for Particle Physics (TWEPP-07), 3-7 Sep. 2007, Prague, Czech Republic. CERN-2007-007, pp. 57-63.
  • Deep sub-micron FD-SOI for front-end application, Nuclear Instruments and Methods in Physics Research Section A, Volume 579, Issue 2, 1 September 2007, Pages 701-705, H. Ikeda, Y. Arai, K. Hara, H. Hayakawa, K. Hirose, Y. Ikegami, H. Ishino, Y. Kasaba, T. Kawasaki, T. Kohriki, et al., Proceedings of the 11th Symposium on Radiation Measurements and Applications (SORMA XI): Ann Arbor, MI, USA, May 23_26, 2006, Nuclear Instruments and Methods in Physics Research Section A, Volume 579, Issue 2, 1 September 2007, Pages 701-705.
  • Evaluation of OKI SOI Technology,Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T. Tsuboyama, Y. Unno,, presented at the 6th Hiroshima symposium of Development and Application of semiconductor tracking devices, Sep. 11-15, 2006, Carmel, California, U.S.A., Nuclear Instruments and Methods in Physics Research Section A, Volume 579, Issue 2, 1 Sept. 2007, Pages 706-711,
  • Monolithic Pixel Detector in a 0.15um SOI Technology, Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, H. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, H. Hayashi,, IEEE Nuclear Sci. Symposium, San Diego, Oct. 29 - Nov. 4, 2006, Conference Record, Vol. 3, Oct. 2006 Page(s):1440 - 1444, Digital Object Identifier 0.1109/NSSMIC.2006.354171.
  • R & D of a pixel sensor based on 0.15 μm fully depleted SOI technology, Toru Tsuboyama, Yasuo Arai, Koichi Fukuda, Kazuhiko Hara, Hirokazu Hayashi, Masashi Hazumi, Jiro Ida, Hirokazu Ikeda, Yoichi Ikegami, Hirokazu Ishino, Takeo Kawasaki, Takashi Kohriki, Hirotaka Komatsubara, Elena Martin, Hideki Miyake, Ai Mochizuki, Morifumi Ohno, Yuuji Saegusa, Hiro Tajima, Osamu Tajima, Tomiaki Takahashi, Susumu Terada, Yoshinobu Unno, Yutaka Ushiroda and Gary Varner,Sep. 2006, Perugia, Italy, Vertex 2006, Nucl. Instr. and Meth. A. Volume 582, Issue 3, 1 December 2007, Pages 861-865. http://dx.doi.org/10.1016/j.nima.2007.07.111
  • Development of a CMOS SOI Pixel Detector, Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada T. Tsuboyama, Y. Unno, Y. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, H. Miyake, E. Martin, G. Varner, H. Tajima M. Ohno, K. Fukuda, H. Komatsubara, J. Ida,Proceedings of 12th Workshop on Electronics for LHC and Future Experiments (LECC 2006), 25-29 September 2006, Valencia SPAIN.
  • Monolithic Pixel Detector in a 0.15mm FD-SOI Technology, Y. Arai,presented at the 6th Hiroshima symposium of Development and Application of semiconductor tracking devices, Sep. 11-15, 2006, Carmel, California, U.S.A.
  • First Results of 0.15um CMOS SOI Pixel Detector, Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, H. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, SNIC Symposium, Stanford, California, 3-6 April 2006, SLAC-PUB-12079, KEK preprint, 2006-34, SLAC Electronic Conference Proceedings Archive (SLAC-R-842, eConf: C0604032) PSN-0016. http://www.slac.stanford.edu/econf/C0604032/papers/0016.PDF.
  • Hard X-Ray SOI Sensor Prototype, E. Martin, G. Varner, M. Barbero, J. Kennedy, H. Tajima, Y. Arai, IEEE Ph. D. Research in Microelectronics and Electronics, 11 - 16 June 2006, Otranto (Lecce), Italy